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Strong exciton-erbium coupling in Si nanocrystal-doped SiO2

Kik, P. G. and Brongersma, M. L. and Polman, A. (2000) Strong exciton-erbium coupling in Si nanocrystal-doped SiO2. Applied Physics Letters, 76 (17). pp. 2325-2327. ISSN 0003-6951. doi:10.1063/1.126334.

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Silicon nanocrystals were formed in SiO2 using Si ion implantation followed by thermal annealing. The nanocrystal-doped SiO2 layer was implanted with Er to a peak concentration of 1.8 at. %. Upon 458 nm excitation the sample shows a broad nanocrystal-related luminescence spectrum centered around 750 nm and two sharp Er luminescence lines at 982 and 1536 nm. By measuring the excitation spectra of these features as well as the temperature-dependent intensities and luminescence dynamics we conclude that (a) the Er is excited by excitons recombining within Si nanocrystals through a strong coupling mechanism, (b) the Er excitation process at room temperature occurs at a submicrosecond time scale, (c) excitons excite Er with an efficiency >55%, and (d) each nanocrystal can have at most ~1 excited Er ion in its vicinity.

Item Type:Article
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Polman, A.0000-0002-0685-3886
Additional Information:©2000 American Institute of Physics. (Received 29 December 1999; accepted 1 March 2000) This work is part of the research program of the Foundation for Fundamental Research on Matter (FOM) and was financially supported by the Netherlands Foundation for Scientific Research (NWO), the Dutch technology foundation (STW), and the SCOOP program of the European Union.
Subject Keywords:silicon compounds; silicon; erbium; photoluminescence; ion implantation; annealing; excitons; nanostructured materials
Issue or Number:17
Record Number:CaltechAUTHORS:KIKapl00
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2428
Deposited By: Archive Administrator
Deposited On:03 Apr 2006
Last Modified:08 Nov 2021 19:47

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