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Fast Neutron Induced Nuclear Counter Effect in Hamamatsu Silicon PIN Diodes and APDs

Zhang, Liyuan and Mao, Rihua and Zhu, Ren-Yuan (2011) Fast Neutron Induced Nuclear Counter Effect in Hamamatsu Silicon PIN Diodes and APDs. IEEE Transactions on Nuclear Science, 58 (3). pp. 1249-1256. ISSN 0018-9499. http://resolver.caltech.edu/CaltechAUTHORS:20110706-150120948

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Abstract

Neutron induced nuclear counter effect in Hamamatsu silicon PIN diodes and APDs was measured by irradiating fast neutrons from a pair of ^(252)Cf sources directly to these devices. It was found that the entire kinetic energy of these neutrons may be converted into electron signals in these devices, leading to anomalous signals of up to a few million electrons in a single isolated calorimeter readout channel. Signals of such amplitude represent equivalent energy of several hundred GeV and a few GeV for PWO and LSO/LYSO crystals respectively assuming the corresponding light yields of 4 and 800 p.e./MeV. The overall rate of the neutron induced nuclear counter effect in APDs is found to be more than an order of magnitude less than that in PIN diodes. Increasing the APD gain was also found to reduce the neutron induced nuclear counter effect. An intelligent front-end chip capable of selecting un-contaminated signal is proposed to eliminate completely the nuclear counter effect without significant cost increase.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/TNS.2011.2132144DOIUNSPECIFIED
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5751599&tag=1PublisherUNSPECIFIED
Additional Information:© 2011 IEEE. Manuscript received August 20, 2010; revised November 28, 2010; accepted March 12, 2011. Date of publication April 19, 2011; date of current version June 15, 2011. This work was supported in part by the U.S. Department of Energy under Grant DE-FG03-92-ER-40701 and in part by the U.S. National Science Foundation Award PHY-0612805. Many discussions with CMS and SuperB colleagues are acknowledged.
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG03-92-ER-40701
NSFPHY-0612805
Subject Keywords:Calorimeter; crystal; fast neutron; neutron; nuclear counter effect; photo-detector; silicon
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INSPEC Accession Number12060201
Record Number:CaltechAUTHORS:20110706-150120948
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20110706-150120948
Official Citation:Liyuan Zhang; Rihua Mao; Ren-Yuan Zhu; , "Fast Neutron Induced Nuclear Counter Effect in Hamamatsu Silicon PIN Diodes and APDs," Nuclear Science, IEEE Transactions on , vol.58, no.3, pp.1249-1256, June 2011 doi: 10.1109/TNS.2011.2132144 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5751599&isnumber=5875999
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:24323
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:13 Jul 2011 22:58
Last Modified:23 Aug 2016 10:03

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