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Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination

Royea, William J. and Juang, Agnes and Lewis, Nathan S. (2000) Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination. Applied Physics Letters, 77 (13). pp. 1988-1990. ISSN 0003-6951. doi:10.1063/1.1312203.

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A two-step, chlorination/alkylation procedure has been used to convert the surface Si–H bonds on NH4F(aq)-etched (111)-oriented Si wafers into Si–alkyl bonds of the form Si–CnH2n + 1 (n>=1). The electrical properties of such functionalized surfaces were investigated under high-level and low-level injection conditions using a contactless rf apparatus. The charge carrier recombination velocities of the alkylated surfaces were <25 cm s^–1 under high-level and low-level injection conditions, implying residual surface trap densities of <3×10^9 cm–2. Although the carrier recombination velocity of hydrogen-terminated Si(111) surfaces in contact with aqueous acids is <20 cm s^–1, this surface deteriorates within 30 min in an air ambient, yielding a high surface recombination velocity. In contrast, methylated Si(111) surfaces exhibit low surface recombination velocities in air for more than 4 weeks. Low surface recombination velocities were also observed for Si surfaces that had been modified with longer alkyl chains.

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Lewis, Nathan S.0000-0001-5245-0538
Additional Information:©2000 American Institute of Physics. (Received 8 May 2000; accepted 27 July 2000) The authors acknowledge the National Science Foundation, Grant No. CHE-9974562, for support of this work.
Subject Keywords:silicon; elemental semiconductors; surface recombination; surface treatment; surface states; electron traps
Issue or Number:13
Record Number:CaltechAUTHORS:ROYapl00
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2453
Deposited By: Archive Administrator
Deposited On:04 Apr 2006
Last Modified:08 Nov 2021 19:48

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