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Nonlithographic epitaxial SnxGe1–x dense nanowire arrays grown on Ge(001)

Ragan, Regina and Ahn, Channing C. and Atwater, Harry A. (2003) Nonlithographic epitaxial SnxGe1–x dense nanowire arrays grown on Ge(001). Applied Physics Letters, 82 (20). pp. 3439-3441. ISSN 0003-6951.

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We have grown 1-µm-thick SnxGe1–x/Ge(001) epitaxial films with 0<x<0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1–x nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated SnxGe1–x alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition.

Item Type:Article
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2003 American Institute of Physics. (Received 26 March 2002; accepted 29 January 2003) The National Science Foundation supported this work. One author (R. R.) acknowledges support in the form of an Intel fellowship.
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Subject Keywords:tin alloys; germanium alloys; semiconductor materials; nanowires; arrays; semiconductor epitaxial layers; molecular beam epitaxial growth; semiconductor growth; energy gap; scanning-transmission electron microscopy; Fourier transform spectra; infrared spectra
Record Number:CaltechAUTHORS:RAGapl03
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2455
Deposited By: Archive Administrator
Deposited On:04 Apr 2006
Last Modified:07 Oct 2017 03:43

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