Ragan, Regina and Ahn, Channing C. and Atwater, Harry A. (2003) Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001). Applied Physics Letters, 82 (20). pp. 3439-3441. ISSN 0003-6951. doi:10.1063/1.1563834. https://resolver.caltech.edu/CaltechAUTHORS:RAGapl03
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Abstract
We have grown 1-µm-thick Sn_xGe_(1–x)/Ge(001) epitaxial films with 0 < x < 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of Sn_xGe_(1–x) nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated Sn_xGe_(1–x) alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition.
| Item Type: | Article | ||||||
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| Alternate Title: | Nonlithographic epitaxial SnxGe1–x dense nanowire arrays grown on Ge(001) | ||||||
| Additional Information: | © 2003 American Institute of Physics. (Received 26 March 2002; accepted 29 January 2003) The National Science Foundation supported this work. One author (R. R.) acknowledges support in the form of an Intel fellowship. | ||||||
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| Subject Keywords: | tin alloys; germanium alloys; semiconductor materials; nanowires; arrays; semiconductor epitaxial layers; molecular beam epitaxial growth; semiconductor growth; energy gap; scanning-transmission electron microscopy; Fourier transform spectra; infrared spectra | ||||||
| Issue or Number: | 20 | ||||||
| DOI: | 10.1063/1.1563834 | ||||||
| Record Number: | CaltechAUTHORS:RAGapl03 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:RAGapl03 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 2455 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 04 Apr 2006 | ||||||
| Last Modified: | 08 Nov 2021 19:48 |
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