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Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001)

Ragan, Regina and Ahn, Channing C. and Atwater, Harry A. (2003) Nonlithographic epitaxial Sn_xGe_(1–x) dense nanowire arrays grown on Ge(001). Applied Physics Letters, 82 (20). pp. 3439-3441. ISSN 0003-6951. doi:10.1063/1.1563834.

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We have grown 1-µm-thick Sn_xGe_(1–x)/Ge(001) epitaxial films with 0 < x < 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of Sn_xGe_(1–x) nanowires oriented along [001], as confirmed by composition contrast observed in scanning transmission electron microscopy in planar view. The Sn-rich regions in these films dominate optical absorption at low energy; phase-separated Sn_xGe_(1–x) alloys have a lower-energy band gap than homogeneous alloys with the same average Sn composition.

Item Type:Article
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Ragan, Regina0000-0002-8694-5683
Atwater, Harry A.0000-0001-9435-0201
Alternate Title:Nonlithographic epitaxial SnxGe1–x dense nanowire arrays grown on Ge(001)
Additional Information:© 2003 American Institute of Physics. (Received 26 March 2002; accepted 29 January 2003) The National Science Foundation supported this work. One author (R. R.) acknowledges support in the form of an Intel fellowship.
Funding AgencyGrant Number
Subject Keywords:tin alloys; germanium alloys; semiconductor materials; nanowires; arrays; semiconductor epitaxial layers; molecular beam epitaxial growth; semiconductor growth; energy gap; scanning-transmission electron microscopy; Fourier transform spectra; infrared spectra
Issue or Number:20
Record Number:CaltechAUTHORS:RAGapl03
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2455
Deposited By: Archive Administrator
Deposited On:04 Apr 2006
Last Modified:08 Nov 2021 19:48

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