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Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy

Jones, J. T. and Bridger, P. M. and Marsh, O. J. and McGill, T. C. (1999) Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy. Applied Physics Letters, 75 (9). pp. 1326-1328. ISSN 0003-6951. doi:10.1063/1.124682.

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An electrostatic force microscope was used to write and image localized dots of charge in a double barrier CeO2/Si/CeO2/Si(111) structure. By applying a relatively large tip voltage and reducing the tip to sample separation to 3–5 nm, charge dots 60–200 nm full width at half maximum of both positive and negative charge have been written. The total stored charge is found to be Q = ±(20–200)e per charge dot. These dots of charge are shown to be stable over periods of time greater than 24 h, with an initial charge decay time constant of tau ~ 9.5 h followed by a period of much slower decay with tau > 24 h. The dependence of dot size and total stored charge on various writing parameters such as tip writing bias, tip to sample separation, and write time is examined.

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Additional Information:©1999 American Institute of Physics. (Received 26 March 1999; accepted 8 July 1999) This work was supported by the Defense Advanced Research Project Agency, and monitored by the Air Force Office of Scientific Research under Grant No. F49620-96-1-0021.
Subject Keywords:cerium compounds; silicon; semiconductor-insulator boundaries; atomic force microscopy; static electrification; electric charge
Issue or Number:9
Record Number:CaltechAUTHORS:JONapl99
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2459
Deposited By: Archive Administrator
Deposited On:04 Apr 2006
Last Modified:08 Nov 2021 19:48

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