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Measurement of the direct energy gap of coherently strained SnxGe1–x/Ge(001) heterostructures

Ragan, Regina and Atwater, Harry A. (2000) Measurement of the direct energy gap of coherently strained SnxGe1–x/Ge(001) heterostructures. Applied Physics Letters, 77 (21). pp. 3418-3420. ISSN 0003-6951.

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The direct energy gap has been measured for coherently strained SnxGe1–x alloys on Ge(001) substrates with 0.035<x<0.115 and film thickness 50–200 nm. The energy gap determined from infrared transmittance data for coherently strained SnxGe1–x alloys indicates a large alloy contribution and a small strain contribution to the decrease in direct energy gap with increasing Sn composition. These results are consistent with a deformation potential model for changes in the valence and conduction band density of states with coherency strain for this alloy system.

Item Type:Article
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2000 American Institute of Physics. (Received 29 December 1999; accepted 20 September 2000)
Subject Keywords:tin alloys; germanium alloys; germanium; energy gap; semiconductor materials; semiconductor heterojunctions; interface states; valence bands; conduction bands; infrared spectra; semiconductor epitaxial layers; internal stresses
Issue or Number:21
Record Number:CaltechAUTHORS:RAGapl00
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2461
Deposited By: Archive Administrator
Deposited On:04 Apr 2006
Last Modified:07 Oct 2017 03:28

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