Measurement of the direct energy gap of coherently strained SnxGe1–x/Ge(001) heterostructures

Ragan, Regina and Atwater, Harry A. (2000) Measurement of the direct energy gap of coherently strained SnxGe1–x/Ge(001) heterostructures. Applied Physics Letters, 77 (21). pp. 3418-3420. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:RAGapl00

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Abstract

The direct energy gap has been measured for coherently strained SnxGe1–x alloys on Ge(001) substrates with 0.035<x<0.115 and film thickness 50–200 nm. The energy gap determined from infrared transmittance data for coherently strained SnxGe1–x alloys indicates a large alloy contribution and a small strain contribution to the decrease in direct energy gap with increasing Sn composition. These results are consistent with a deformation potential model for changes in the valence and conduction band density of states with coherency strain for this alloy system.

Item Type:

Article

ORCID:

Author	ORCID
Atwater, Harry A.	0000-0001-9435-0201

Additional Information:

Subject Keywords:

tin alloys; germanium alloys; germanium; energy gap; semiconductor materials; semiconductor heterojunctions; interface states; valence bands; conduction bands; infrared spectra; semiconductor epitaxial layers; internal stresses

Record Number:

CaltechAUTHORS:RAGapl00

Persistent URL:

http://resolver.caltech.edu/CaltechAUTHORS:RAGapl00

Alternative URL:

http://dx.doi.org/10.1063/1.1328097

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No commercial reproduction, distribution, display or performance rights in this work are provided.

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2461

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CaltechAUTHORS

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Deposited On:

04 Apr 2006

Last Modified:

07 Oct 2017 03:28

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