Ragan, Regina and Atwater, Harry A. (2000) Measurement of the direct energy gap of coherently strained Sn_xGe_(1–x)/Ge(001) heterostructures. Applied Physics Letters, 77 (21). pp. 3418-3420. ISSN 0003-6951. doi:10.1063/1.1328097. https://resolver.caltech.edu/CaltechAUTHORS:RAGapl00
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Abstract
The direct energy gap has been measured for coherently strained Sn_xGe_(1–x) alloys on Ge(001) substrates with 0.035 < x < 0.115 and film thickness 50–200 nm. The energy gap determined from infrared transmittance data for coherently strained Sn_xGe_(1–x) alloys indicates a large alloy contribution and a small strain contribution to the decrease in direct energy gap with increasing Sn composition. These results are consistent with a deformation potential model for changes in the valence and conduction band density of states with coherency strain for this alloy system.
| Item Type: | Article | ||||||
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| Alternate Title: | Measurement of the direct energy gap of coherently strained SnxGe1–x/Ge(001) heterostructures | ||||||
| Additional Information: | © 2000 American Institute of Physics. (Received 29 December 1999; accepted 20 September 2000) | ||||||
| Subject Keywords: | tin alloys; germanium alloys; germanium; energy gap; semiconductor materials; semiconductor heterojunctions; interface states; valence bands; conduction bands; infrared spectra; semiconductor epitaxial layers; internal stresses | ||||||
| Issue or Number: | 21 | ||||||
| DOI: | 10.1063/1.1328097 | ||||||
| Record Number: | CaltechAUTHORS:RAGapl00 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:RAGapl00 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 2461 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 04 Apr 2006 | ||||||
| Last Modified: | 08 Nov 2021 19:48 |
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