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Strain in wet thermally oxidized square and circular mesas

Alonzo, A. C. and Cheng, X.-C. and McGill, T. C. (2000) Strain in wet thermally oxidized square and circular mesas. Journal of Applied Physics, 87 (9). pp. 4594-4599. ISSN 0021-8979. doi:10.1063/1.373108.

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In this paper, we report the observation, through optical microscopy, of drumhead-like patterns in square and circular mesas which have been wet thermally oxidized to completion. Micro-Raman spectroscopy measurements are used to show that these patterns roughly correspond to variations in strain induced in surrounding semiconductor layers by the oxidation process. In addition, the patterns have a specific orientation with respect to the crystallographic axes of the semiconductor. A crystallographic dependence of the oxidation process itself is demonstrated and used to explain the orientation of the drumhead patterns.

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Additional Information:© 2000 American Institute of Physics. (Received 28 June 1999; accepted 4 January 2000) The micro-Raman spectroscopy results reported in this paper were taken by F. Hardcastle at Namar Scientific, Inc. The work was supported in part by the Office of Naval Research under Grant No. N00014-98-1-0567.
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Office of Naval Research (ONR)N00014-98-1-0567
Subject Keywords:optical microscopy; oxidation; internal stresses; Raman spectra; aluminium compounds; gallium arsenide; III-V semiconductors
Issue or Number:9
Record Number:CaltechAUTHORS:ALOjap00
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2480
Deposited By: Archive Administrator
Deposited On:05 Apr 2006
Last Modified:08 Nov 2021 19:48

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