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Tunnel switch diode based on AlSb/GaSb heterojunctions

Cheng, X.-C. and Cartoixà, X. and Barton, M. A. and Hill, C. J. and McGill, T. C. (2000) Tunnel switch diode based on AlSb/GaSb heterojunctions. Journal of Applied Physics, 88 (11). pp. 6948-6950. ISSN 0021-8979. doi:10.1063/1.1317236.

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We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated with drift diffusion simulations which have been modified to account for the presence of a tunneling contact.

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Additional Information:© 2000 American Institute of Physics (Received 13 July 2000; accepted 17 August 2000) The authors thank E. S. Daniel, D. Z.-Y. Ting, W. Frensley, and K. Smith for their fruitful discussions on TSD simulations. This work is supported in part by the Office of Naval Research under Grant No. N00014-98-1-0567.
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Office of Naval Research (ONR)N00014-98-1-0567
Subject Keywords:aluminium compounds; gallium compounds; III-V semiconductors; tunnel diodes; semiconductor switches; molecular beam epitaxial growth; semiconductor growth; p-n heterojunctions; thyristors; current density; semiconductor device models; semiconductor device measurement
Issue or Number:11
Record Number:CaltechAUTHORS:CHEjap00
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2481
Deposited By: Archive Administrator
Deposited On:05 Apr 2006
Last Modified:08 Nov 2021 19:48

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