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A Wideband 77GHz, 17.5dBm Power Amplifier in Silicon

Komijani, Abbas and Hajimiri, Ali (2005) A Wideband 77GHz, 17.5dBm Power Amplifier in Silicon. In: Proceedings of the IEEE 2005 Custom Integrated Circuits Conference. IEEE Custom Integrated Circuits Conference. IEEE , Piscataway, N.J., pp. 571-574. ISBN 0-7803-9023-7.

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A 77GHz, +17.5dBm fully-integrated power amplifier (PA) with 50Ω input and output matching is fabricated in a 0.12μm SiGe BiCMOS process. The power amplifier achieves a peak power gain of 17dB and a maximum single-ended output power of +17.5dBm with 12.8% of power-added efficiency (PAE). It has a 3dB bandwidth of 15GHz and draws 165mA from a 1.8V supply. Microstrip tubs are used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in a small area of 0.6mm.

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Additional Information:© 2005 IEEE. Date of Current Version: 10 January 2006. The authors would like to thank IBM Microelectronics for fabricating the chip. They also appreciate valuable help from S. Weinreb, A. Babakhani, A. Natarajan, B. Analui, X. Guan, and E. Afshari. The technical support for CAD tools from Agilent Technologies, Zeland Software Inc. and Ansoft Corp. is also appreciated.
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INSPEC Accession Number8834579
Record Number:CaltechAUTHORS:20110819-071747535
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Official Citation:Abbas Komijani; Ali Hajimiri; , "A wideband 77GHz, 17.5dBm power amplifier in silicon," Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005 , vol., no., pp. 571- 574, 18-21 Sept. 2005 doi: 10.1109/CICC.2005.1568732 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:24949
Deposited By: Ruth Sustaita
Deposited On:19 Aug 2011 14:50
Last Modified:23 Aug 2016 10:04

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