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Storage Coding for Wear Leveling in Flash Memories

Jiang, Anxiao (Andrew) and Mateescu, Robert and Yaakobi, Eitan and Bruck, Jehoshua and Siegel, Paul H. and Vardy, Alexander and Wolf, Jack K. (2009) Storage Coding for Wear Leveling in Flash Memories. California Institute of Technology , Pasadena, CA. (Unpublished)

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NAND flash memories are currently the most widely used type of flash memories. In a NAND flash memory, although a cell block consists of many pages, to rewrite one page, the whole block needs to be erased and reprogrammed. Block erasures determine the longevity and efficiency of flash memories. So when data is frequently reorganized, which can be characterized as a data movement process, how to minimize block erasures becomes an important challenge. In this paper, we show that coding can significantly reduce block erasures for data movement, and present several optimal or nearly optimal algorithms. While the sorting-based non-coding schemes require O(n log n) erasures to move data among n blocks, coding-based schemes use only O(n) erasures and also optimize the utilization of storage space.

Item Type:Report or Paper (Technical Report)
Related URLs:
URLURL TypeDescription Report ItemJournal Article
Yaakobi, Eitan0000-0002-9851-5234
Bruck, Jehoshua0000-0001-8474-0812
Siegel, Paul H.0000-0002-2539-4646
Group:Parallel and Distributed Systems Group
Record Number:CaltechPARADISE:2009.ETR094
Persistent URL:
Official Citation:Anxiao (Andrew) Jiang, Robert Mateescu, Eitan Yaakobi, Jehoshua Bruck, Paul H. Seigel, Alexander Vardy, and Jack K. Wolf. Storage Coding for Wear Leveling in Flash Memories. Technical Report. California Institute of Technology, Pasadena, CA. [CaltechPARADISE:2009.ETR094]
Usage Policy:You are granted permission for individual, educational, research and non-commercial reproduction, distribution, display and performance of this work in any format.
ID Code:26125
Deposited By: Imported from CaltechPARADISE
Deposited On:21 Sep 2009
Last Modified:09 Mar 2020 13:19

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