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A 24GHz, +14.5dBm Fully-Integrated Power Amplifier in 0.18µm CMOS

Komijani, Abbas and Hajimiri, Ali (2004) A 24GHz, +14.5dBm Fully-Integrated Power Amplifier in 0.18µm CMOS. In: Proceedings of the IEEE 2004 Custom Integrated Circuits Conference. IEEE , Piscataway, NJ , pp. 561-564. ISBN 0-7803-8495-4.

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A 24 GHz, +14.5 dBm fully-integrated power amplifier with 50 Ω input and output matching is fabricated using 0.18 μm CMOS transistors. To enable this, a shielded-substrate coplanar waveguide transmission line structure is used to achieve low loss and small area. The power amplifier achieves a power gain of 7 dB and a maximum single-ended output power of +14.5 dBm with a 3 dB bandwidth of 3.1 GHz, while drawing 100 mA from a 2.8 V supply. The chip area is 1.26 mm^2.

Item Type:Book Section
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Hajimiri, Ali0000-0001-6736-8019
Additional Information:© 2004 IEEE. Issue Date: 3-6 Oct. 2004. Date of Current Version: 22 November 2004. The authors would like to thank A. Natarajan, H. Hashemi, M. Morgan, E. Afshari, N. Wadefalk and A. Shen of Caltech for their assistance. The technical support for CAD tools from Agilent Technologies and Zeland Sohare, Inc. is also appreciated.
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INSPEC Accession Number8181041
Record Number:CaltechAUTHORS:20111014-080912895
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Official Citation:Komijani, A.; Hajimiri, A.; , "A 24GHz, +14.5dBm fully-integrated power amplifier in 0.18 μm CMOS," Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004 , vol., no., pp. 561- 564, 3-6 Oct. 2004 doi: 10.1109/CICC.2004.1358884 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:27224
Deposited By: Ruth Sustaita
Deposited On:14 Oct 2011 17:01
Last Modified:09 Nov 2021 16:46

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