Hydrogenation of Si from SiN_x: H films: how much hydrogen is really in the Si?

Stavola, Michael and Jiang, Fan and Rohatgi, A. and Kim, D. and Holt, J. and Atwater, H. and Kalejs, J. (2003) Hydrogenation of Si from SiN_x: H films: how much hydrogen is really in the Si? In: Proceedings of 3rd World Conference on Photovoltaic Energy Conversion. IEEE , pp. 909-912. ISBN 4-9901816-0-3. https://resolver.caltech.edu/CaltechAUTHORS:20111025-142439492

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Abstract

A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN_x surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN_x film.

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Book Section

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URL	URL Type	Description
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1305430	Publisher	Article

ORCID:

Author	ORCID
Atwater, H.	0000-0001-9435-0201

Additional Information:

© 2003 IEEE. Issue Date: 18-18 May 2003; Date of Current Version: 28 June 2004. We thank Mark Rosenblum for his assistance with our experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914.

Funders:

Funding Agency	Grant Number
National Renewable Energy Laboratory	AAT-1-31606-04
NSF	DMR-0108914

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CaltechAUTHORS:20111025-142439492

Persistent URL:

https://resolver.caltech.edu/CaltechAUTHORS:20111025-142439492

Official Citation:

Stavola, M.; Fan Jiang; Rohatgi, A.; Kim, D.; Holt, J.; Atwater, H.; Kalejs, J.; , "Hydrogenation of Si from SiN/sub x/:H films: how much hydrogen is really in the Si?," Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on , vol.1, no., pp.909-912 Vol.1, 18-18 May 2003

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27419

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CaltechAUTHORS

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Deposited On:

25 Oct 2011 22:21

Last Modified:

03 Oct 2019 03:23

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