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Hydrogenation of Si from SiN_x: H films: how much hydrogen is really in the Si?

Stavola, Michael and Jiang, Fan and Rohatgi, A. and Kim, D. and Holt, J. and Atwater, H. and Kalejs, J. (2003) Hydrogenation of Si from SiN_x: H films: how much hydrogen is really in the Si? In: Proceedings of 3rd World Conference on Photovoltaic Energy Conversion. IEEE , pp. 909-912. ISBN 4-9901816-0-3.

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A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN_x surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN_x film.

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Atwater, H.0000-0001-9435-0201
Additional Information:© 2003 IEEE. Issue Date: 18-18 May 2003; Date of Current Version: 28 June 2004. We thank Mark Rosenblum for his assistance with our experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914.
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National Renewable Energy LaboratoryAAT-1-31606-04
Record Number:CaltechAUTHORS:20111025-142439492
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Official Citation:Stavola, M.; Fan Jiang; Rohatgi, A.; Kim, D.; Holt, J.; Atwater, H.; Kalejs, J.; , "Hydrogenation of Si from SiN/sub x/:H films: how much hydrogen is really in the Si?," Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on , vol.1, no., pp.909-912 Vol.1, 18-18 May 2003
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:27419
Deposited On:25 Oct 2011 22:21
Last Modified:03 Oct 2019 03:23

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