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A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

Bell, L. D. and Boer, E. and Ostraat, M. and Brongersma, M. L. and Flagan, R. C. and Atwater, H. A. and De Blauwe, J. and Green, M. L. (2001) A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots. NASA/JPL .

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Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled.

Item Type:Report or Paper (Technical Report)
Related URLs:
URLURL TypeDescription
Flagan, R. C.0000-0001-5690-770X
Atwater, H. A.0000-0001-9435-0201
Additional Information:© 2001. Issue Date: Feb. 21, 2001.
Subject Keywords:non-volatile memory single electronics nanocrystals
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Other Numbering System NameOther Numbering System ID
JPL Technical ReportsJPL-TR-01-0229
Record Number:CaltechAUTHORS:20111111-112553643
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:27752
Deposited By: Ruth Sustaita
Deposited On:06 Dec 2011 23:02
Last Modified:03 Oct 2019 03:26

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