Bell, L. D. and Boer, E. and Ostraat, M. and Brongersma, M. L. and Flagan, R. C. and Atwater, H. A. and De Blauwe, J. and Green, M. L. (2001) A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots. NASA/JPL . https://resolver.caltech.edu/CaltechAUTHORS:20111111-112553643
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Abstract
Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled.
Item Type: | Report or Paper (Technical Report) | ||||||
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Additional Information: | © 2001. Issue Date: Feb. 21, 2001. | ||||||
Subject Keywords: | non-volatile memory single electronics nanocrystals | ||||||
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Record Number: | CaltechAUTHORS:20111111-112553643 | ||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20111111-112553643 | ||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
ID Code: | 27752 | ||||||
Collection: | CaltechAUTHORS | ||||||
Deposited By: | Ruth Sustaita | ||||||
Deposited On: | 06 Dec 2011 23:02 | ||||||
Last Modified: | 03 Oct 2019 03:26 |
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