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Intrinsic dissipation in high-frequency micromechanical resonators

Mohanty, P. and Harrington, D. A. and Ekinci, K. L. and Yang, Y. T. and Murphy, M. J. and Roukes, M. L. (2002) Intrinsic dissipation in high-frequency micromechanical resonators. Physical Review B, 66 (8). Art. No. 085416. ISSN 0163-1829. doi:10.1103/PhysRevB.66.085416.

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We report measurements of intrinsic dissipation in micron-sized suspended resonators machined from single crystals of galium arsenide and silicon. In these experiments on high-frequency micromechanical resonators, designed to understand intrinsic mechanisms of dissipation, we explore dependence of dissipation on temperature, magnetic field, frequency, and size. In contrast to most of the previous measurements of acoustic attenuation in crystalline and amorphous structures in this frequency range, ours is a resonant measurement; dissipation is measured at the natural frequencies of structural resonance, or modes of the structure associated with flexural and torsional motion. In all our samples we find a weakly temperature dependent dissipation at low temperatures. We compare and contrast our data to various probable mechanisms, including thermoelasticity, clamping, anharmonic mode-coupling, surface anisotropy and defect motion, both in bulk and on surface. The observed parametric dependencies indicate that the internal defect motion is the dominant mechanism of intrinsic dissipation in our samples.

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Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2002 The American Physical Society Received 2 January 2002; revised 26 March 2002; published 20 August 2002 We thank Christian Enss, Stefan Kettemann, Ron Lifshitz, and Philip Stamp for many useful discussions. We gratefully acknowledge the experimental help of Jessica Arlett, X.M. Huang, and Jean Casey. This project is financially supported by DARPA.
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Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Issue or Number:8
Record Number:CaltechAUTHORS:MOHprb02
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ID Code:2777
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Deposited On:26 Apr 2006
Last Modified:08 Nov 2021 19:50

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