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Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol–gel process

Yang, Lan and Carmon, Tal and Min, Bumki and Spillane, Sean M. and Vahala, Kerry J. (2005) Erbium-doped and Raman microlasers on a silicon chip fabricated by the sol–gel process. Applied Physics Letters, 86 (9). Art. No. 091114. ISSN 0003-6951. doi:10.1063/1.1873043.

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We report high-Q sol–gel microresonators on silicon chips, fabricated directly from a sol–gel layer deposited onto a silicon substrate. Quality factors as high as 2.5×10^7 at 1561 nm were obtained in toroidal microcavities formed of silica sol–gel, which allowed Raman lasing at absorbed pump powers below 1 mW. Additionally, Er3+-doped microlasers were fabricated from Er3+-doped sol–gel layers with control of the laser dynamics possible by varying the erbium concentration of the starting sol–gel material. Continuous lasing with a threshold of 660 nW for erbium-doped microlaser was also obtained.

Item Type:Article
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URLURL TypeDescription
Carmon, Tal0000-0002-4727-6368
Vahala, Kerry J.0000-0003-1783-1380
Additional Information:©2005 American Institute of Physics (Received 23 April 2004; accepted 26 January 2005; published online 25 February 2005) This work was supported by the Defense Advanced Research Project Agency, the National Science Foundation, and the Caltech Lee Center.
Subject Keywords:microchip lasers; silicon; substrates; erbium; doping; sol-gel processing; Raman lasers; Q-factor; infrared sources
Issue or Number:9
Record Number:CaltechAUTHORS:YANapl05
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2808
Deposited By: Archive Administrator
Deposited On:28 Apr 2006
Last Modified:08 Nov 2021 19:51

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