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Monocrystalline silicon carbide nanoelectromechanical systems

Yang, Y. T. and Ekinci, K. L. and Huang, X. M. H. and Schiavone, L. M. and Roukes, M. L. and Zorman, C. A. and Mehregany, M. (2001) Monocrystalline silicon carbide nanoelectromechanical systems. Applied Physics Letters, 78 (2). pp. 162-164. ISSN 0003-6951. doi:10.1063/1.1338959.

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SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators.

Item Type:Article
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Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2001 American Institute of Physics (Received 21 August 2000; accepted 15 November 2000) The authors gratefully acknowledge support for this work from DARPA MTO/MEMS under Grant Nos. DABT63-98-1-0012 (Caltech) and DABT63-98-1-0010 (CWRU). The authors would like to thank Tomoyuki Yoshie for his technical assistance.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)DABT63-98-1-0012
Defense Advanced Research Projects Agency (DARPA)DABT63-98-1-0010
Subject Keywords:silicon compounds; wide band gap semiconductors; micromechanical resonators; nanotechnology; micromachining; electron beam lithography; sputter etching; Young's modulus
Issue or Number:2
Record Number:CaltechAUTHORS:YANapl01b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2809
Deposited By: Archive Administrator
Deposited On:28 Apr 2006
Last Modified:08 Nov 2021 19:51

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