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Nickel layers on indium arsenide

Hill, C. J. and Beach, R. A. and McGill, T. C. (2000) Nickel layers on indium arsenide. Journal of Vacuum Science and Technology B, 18 (4). pp. 2044-2046. ISSN 1071-1023. doi:10.1116/1.1306283.

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We report here on the preparation and characterization of InAs substrates for in situ deposition of ferromagnetic contacts, a necessary precursor for semiconductor devices based on spin injection. InAs has been grown on InAs(111)A and (100) substrates by molecular-beam epitaxy and then metalized in situ in order to better understand the mechanisms that inhibit spin injection into a semiconductor. Initial x-ray characterization of the samples indicate the presence of nickel arsenides and indium–nickel compounds forming during deposition at temperatures above room temperature. Several temperature ranges have been investigated in order to determine the effect on nickel-arsenide formation. The presence of such compounds at the interface could greatly reduce the spin-injection efficiency and help elucidate previous unsuccessful attempts at measuring spin injection into InAs.

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Additional Information: © 2000 American Vacuum Society. Received 17 January 2000; accepted 25 May 2000. The authors would like to thank Professor J. O. McCaldin for many fruitful discussions. This work was supported by Office of Naval Research Grant Nos. N0014-99-1-1006 and N0014-91-1-0492.
Funding AgencyGrant Number
Office of Naval Research (ONR)N0014-99-1-1006
Office of Naval Research (ONR)N0014-91-1-0492
Subject Keywords:semiconductor-metal boundaries, ferromagnetic materials, magnetic epitaxial layers, molecular beam epitaxial growth, indium compounds, III-V semiconductors, nickel
Issue or Number:4
Classification Code:PACS: 73.40.Ns; 75.50.Cc; 75.70.Ak; 81.15.Hi; 68.35.Fx
Record Number:CaltechAUTHORS:20111130-095036875
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:28247
Deposited By: Tony Diaz
Deposited On:29 Feb 2012 00:13
Last Modified:09 Nov 2021 16:55

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