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Analysis and Design of Silicon Bipolar Distributed Oscillators

Hajimiri, Ali and Wu, Hui (2000) Analysis and Design of Silicon Bipolar Distributed Oscillators. In: 2000 Symposium on VSLI Circuits: Digest Technical Papers. IEEE , Piscataway, NJ, pp. 102-105. ISBN 0-7803-6310-8.

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A systematic approach to design of silicon bipolar distributed oscillators and voltage-controlled oscillators (VCOs) is presented. The operation of the distributed oscillators is analyzed and the general condition for oscillation is derived, resulting in analytical expressions for the frequency and amplitude of the distributed oscillators. Special attention is paid to transmission line modeling that largely determines the performance of the distributed oscillators. A distributed VCO operating at 12 GHz dissipating 13 mW of power is demonstrated. The VCO has a tuning range of 26% with a phase noise of -104 dBc/Hz at 1 MHz offset from the carrier. A second design shows a 17 GHz bipolar distributed oscillator, which dissipates 9 mW of power.

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Hajimiri, Ali0000-0001-6736-8019
Additional Information:© 2000 IEEE. Date of Current Version: 06 August 2002. The authors would like to thank Lee Center for Advanced Networking for partial support and Conexant Systems for chip fabrication. We are also deeply indebted to Lawrence Cheung of Caltech for help with HFSS simulation of the transmission lines.
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Caltech Lee Center for Advanced NetworkingUNSPECIFIED
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INSPEC Accession Number6715274
Record Number:CaltechAUTHORS:20111205-084201864
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Official Citation:Hajimiri, A.; Hui Wu; , "Analysis and design of silicon bipolar distributed oscillators," VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on , vol., no., pp.102-105, 2000 doi: 10.1109/VLSIC.2000.852863 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:28289
Deposited By: Ruth Sustaita
Deposited On:05 Dec 2011 17:01
Last Modified:09 Nov 2021 16:55

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