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Alloying to increase the band gap for improving thermoelectric properties of Ag_(2)Te

Pei, Yanzhong and Heinz, Nicholas A. and Snyder, G. Jeffrey (2011) Alloying to increase the band gap for improving thermoelectric properties of Ag_(2)Te. Journal of Materials Chemistry, 21 (45). pp. 18256-18260. ISSN 0959-9428. https://resolver.caltech.edu/CaltechAUTHORS:20111207-112856206

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Abstract

Ag_(2)Te simultaneously shows high mobility and low thermal conductivity, however the relatively low band gap of ~0.2 eV prevents it from achieving high thermoelectric figure of merit, zT, in the high temperature phase. In this study, the band gap of Ag_(2)Te has been increased enabling a zT of unity by forming alloys and composites with PbTe, thereby demonstrating the importance of exploiting potentially good thermoelectrics among these small band gap semiconductors and similar materials.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1039/c1jm13888jDOIUNSPECIFIED
http://pubs.rsc.org/en/Content/ArticleLanding/2011/JM/c1jm13888jPublisherUNSPECIFIED
Additional Information:© 2011 Royal Society of Chemistry. Received 10th August 2011; Accepted 29th September 2011. First published on the web 17 Oct 2011. This work is supported by NASA-JPL and DARPA Nano Materials Program.
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Funding AgencyGrant Number
NASA/JPLUNSPECIFIED
Defense Advanced Research Projects Agency (DARPA) Nano Materials ProgramUNSPECIFIED
Issue or Number:45
Record Number:CaltechAUTHORS:20111207-112856206
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20111207-112856206
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:28349
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:09 Dec 2011 00:16
Last Modified:03 Oct 2019 03:31

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