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Growth of Compositionally Graded BST by Metal Organic Chemical Vapor Deposition

Boyd, D. A. and Cole, M. W. (2011) Growth of Compositionally Graded BST by Metal Organic Chemical Vapor Deposition. Integrated Ferroelectrics, 126 (1). pp. 17-20. ISSN 1058-4587. https://resolver.caltech.edu/CaltechAUTHORS:20111212-104658135

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Abstract

We report the growth of a compositionally stratified Ba_xSr1_(-x)TiO_3 (BST) thin film on MgO by metal organic chemical vapor deposition (MOCVD). Real-time control of the precursor flux based on UV absorption spectroscopy was used to systematically vary the ratio of Ba:Sr during deposition. The composition of the film with depth was measured by Rutherford backscattering spectroscopy, and x was found to decrease from 0.87 at the film-air interface to 0.43 near the film-MgO interface.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1080/10584587.2011.574970DOIUNSPECIFIED
http://www.tandfonline.com/doi/abs/10.1080/10584587.2011.574970PublisherUNSPECIFIED
Additional Information:© 2011 Taylor & Francis Group, LLC. Received January 3, 2011. Available online June 27, 2011. This work has been generously supported by the Army Research Office award # W911NF-07-1-0359.
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)W911NF-07-1-0359
Subject Keywords:BST; ferroelectric thin films; MOCVD
Issue or Number:1
Record Number:CaltechAUTHORS:20111212-104658135
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20111212-104658135
Official Citation: Growth of Compositionally Graded BST by Metal Organic Chemical Vapor Deposition D. A. Boyd, M. W. Cole Integrated Ferroelectrics Vol. 126, Iss. 1, 2011
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:28419
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:12 Dec 2011 19:07
Last Modified:03 Oct 2019 03:32

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