A Caltech Library Service

High Performance Ring Oscillators from 10-nm Wide Silicon Nanowire Field-Effect Transistors

Huang, Ruo-Gu and Tham, Douglas and Wang, Dunwei and Heath, James R. (2011) High Performance Ring Oscillators from 10-nm Wide Silicon Nanowire Field-Effect Transistors. Nano Research, 4 (10). pp. 1005-1012. ISSN 1998-0124.

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item:


We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~10^8), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.

Item Type:Article
Related URLs:
URLURL TypeDescription ReadCube access
Heath, James R.0000-0001-5356-4385
Additional Information:© 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg. Received: 11 May 2011. Revised: 7 June 2011. Accepted: 8 June 2011. The authors acknowledge H. Ahmad and Y. -S. Shin for graphics assistance. This work was funded by the National Science Foundation under Grant CCF-0541461 and the Department of Energy (DE-FG02-04ER46175). D. Tham gratefully acknowledges support by the KAUST Scholar Award.
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG02-04ER46175
King Abdullah University of Science and Technology (KAUST)UNSPECIFIED
Subject Keywords:Silicon nanowire (SiNW), field-effect transistor (FET), surface treatment, inverter, ring oscillator
Issue or Number:10
Record Number:CaltechAUTHORS:20111213-071827066
Persistent URL:
Official Citation:Huang, RG., Tham, D., Wang, D. et al. Nano Res. (2011) 4: 1005. doi:10.1007/s12274-011-0157-2
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:28431
Deposited By: Ruth Sustaita
Deposited On:13 Dec 2011 15:47
Last Modified:03 Oct 2019 03:32

Repository Staff Only: item control page