Yoshie, Tomoyuki and Painter, Oskar and Scherer, Axel (2000) Photonic crystal defect microcavities with indium arsenide quantum dots. In: Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. IEEE , Piscataway, N.J. , pp. 415-416. ISBN 0-7803-5947-X. https://resolver.caltech.edu/CaltechAUTHORS:20111216-095820974
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Abstract
The coupling of InAs QDs emission to the two dimensional photonic crystal defect cavity has been demonstrated for the first time and a narrow filtered emission linewidth could be observed. We describe the emission from 2D photonic crystals that contain an InAs QDs active layer. The epitaxial layers were grown on (001) GaAs by molecular beam epitaxy.
Item Type: | Book Section | |||||||||
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Additional Information: | © 2000 IEEE. Date of Current Version: 06 August 2002. | |||||||||
DOI: | 10.1109/LEOS.2000.893889 | |||||||||
Record Number: | CaltechAUTHORS:20111216-095820974 | |||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20111216-095820974 | |||||||||
Official Citation: | Yoshie, T.; Painter, O.; Scherer, A.; Huffaker, D.; Deppe, D.; , "Photonic crystal defect microcavities with indium arsenide quantum dots," Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE , vol.2, no., pp.415-416 vol.2, 2000 doi: 10.1109/LEOS.2000.893889 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=893889&isnumber=19244 | |||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
ID Code: | 28485 | |||||||||
Collection: | CaltechAUTHORS | |||||||||
Deposited By: | Ruth Sustaita | |||||||||
Deposited On: | 16 Dec 2011 18:50 | |||||||||
Last Modified: | 09 Nov 2021 16:57 |
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