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Photonic crystal defect microcavities with indium arsenide quantum dots

Yoshie, Tomoyuki and Painter, Oskar and Scherer, Axel (2000) Photonic crystal defect microcavities with indium arsenide quantum dots. In: Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. IEEE , Piscataway, N.J. , pp. 415-416. ISBN 0-7803-5947-X. https://resolver.caltech.edu/CaltechAUTHORS:20111216-095820974

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Abstract

The coupling of InAs QDs emission to the two dimensional photonic crystal defect cavity has been demonstrated for the first time and a narrow filtered emission linewidth could be observed. We describe the emission from 2D photonic crystals that contain an InAs QDs active layer. The epitaxial layers were grown on (001) GaAs by molecular beam epitaxy.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/LEOS.2000.893889DOIArticle
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=893889&tag=1PublisherArticle
ORCID:
AuthorORCID
Painter, Oskar0000-0002-1581-9209
Additional Information:© 2000 IEEE. Date of Current Version: 06 August 2002.
Record Number:CaltechAUTHORS:20111216-095820974
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20111216-095820974
Official Citation:Yoshie, T.; Painter, O.; Scherer, A.; Huffaker, D.; Deppe, D.; , "Photonic crystal defect microcavities with indium arsenide quantum dots," Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE , vol.2, no., pp.415-416 vol.2, 2000 doi: 10.1109/LEOS.2000.893889 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=893889&isnumber=19244
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:28485
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:16 Dec 2011 18:50
Last Modified:03 Oct 2019 03:32

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