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Submillimeter-wave sideband generation using a planar diode array

Kurtz, David S. and Hesler, Jeffrey L. and Haclker, Jonathan B. and Crowe, Thomas W. and Rutledge, David B. and Weikle, Robert M., II (1998) Submillimeter-wave sideband generation using a planar diode array. In: 1998 IEEE MTT-S International Microwave Symposium Digest. IEEE , Piscataway, NJ , pp. 1903-1906. ISBN 0-7803-4471-5.

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A 36 element array of planar Schottky diodes is used to mix the output of a CO_2 pumped far infrared laser with a 1-20 GHz microwave source to generate tunable sidebands at 1.6 THz. The double sideband power was measured by heterodyne detection with a 1T23 corner cube Schottky diode for a calculated output power of 5.9 μW with a 28 dB conversion loss.

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Additional Information:© 1998 IEEE. Date of Current Version: 06 August 2002. This work was supported by the U.S. Army Research Office under grant DAAHO4-94-G-0112 and the U.S. Army National Ground Intelligence Center.
Funding AgencyGrant Number
Army Research Office (ARO)DAAHO4-94-G-0112
Army National Ground Intelligence CenterUNSPECIFIED
Record Number:CaltechAUTHORS:20120112-113455937
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Official Citation:Kurtz, D.S.; Hesler, J.L.; Hacker, J.B.; Crowe, T.W.; Rutledge, D.B.; Weikle, R.M.; , "Submillimeter-wave sideband generation using a planar diode array ," Microwave Symposium Digest, 1998 IEEE MTT-S International , vol.3, no., pp.1903-1906 vol.3, 7-12 Jun 1998 doi: 10.1109/MWSYM.1998.700868 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:28759
Deposited By: Tony Diaz
Deposited On:17 Jan 2012 22:54
Last Modified:09 Nov 2021 17:00

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