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Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

Walachová, J. and Zelinka, J. and Vaniš, J. and Chow, D. H. and Schulman, J. N. and Karamazov, S. and Cukr, M. and Zich, P. and Král, J. and McGill, T. C. (1997) Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy. Applied Physics Letters, 70 (26). pp. 3588-3590. ISSN 0003-6951. doi:10.1063/1.119274.

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InAs/AlSb resonant tunneling heterostructures have been studied by ballistic electron emission spectroscopy. Current thresholds attributed to quasibound states in the quantum well and emission over the AlSb barriers are observed. The observed shape of thresholds is consistent with inelastic processes in the InAs layers of the structures, where a high number of electron–hole pairs are generated. A threshold consistent with the generation of electron–hole pairs in quantum well states is observed.

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Additional Information:© 1997 American Institute of Physics. Received 24 July 1996; accepted for publication 26 April 1997. This work was supported in part by Czech Grant Agency Project No. 202/94/1056.
Funding AgencyGrant Number
Czech Grant Agency202/94/1056
Subject Keywords:indium compounds, aluminium compounds, III-V semiconductors, semiconductor quantum wells, electron emission, high field effects, quantum interference phenomena
Issue or Number:26
Classification Code:PACS: 68.65.-k; 68.37.Ef; 68.37.Ps; 68.37.Rt; 68.37.Uv
Record Number:CaltechAUTHORS:20120131-105259402
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29039
Deposited By: Tony Diaz
Deposited On:01 Mar 2012 20:37
Last Modified:09 Nov 2021 17:03

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