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Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures

Shcheglov, K. V. and Yang, C. M. and Vahala, K. J. and Atwater, Harry A. (1995) Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures. Applied Physics Letters, 66 (6). pp. 745-747. ISSN 0003-6951. doi:10.1063/1.114080.

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Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h.

Item Type:Article
Related URLs:
URLURL TypeDescription DOIArticle
Vahala, K. J.0000-0003-1783-1380
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 1995 American Institute of Physics. Received 28 June 1994; accepted for publication 30 November 1994. This work was supported by the U.S. Department of Energy under Grant DE-FG03-89ER45395. One of us (K.V.S.) acknowledges support from a J.S. Fluor Foundation Fellowship.
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG03-89ER45395
J. S. Fluor FoundationUNSPECIFIED
Issue or Number:6
Classification Code:PACS: 85.60.Jb; 78.60.Fi; 78.66.Sq
Record Number:CaltechAUTHORS:20120215-093505302
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:29299
Deposited By: Tony Diaz
Deposited On:21 Mar 2012 20:27
Last Modified:09 Nov 2021 17:05

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