Shcheglov, K. V. and Yang, C. M. and Vahala, K. J. and Atwater, Harry A. (1995) Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures. Applied Physics Letters, 66 (6). pp. 745-747. ISSN 0003-6951. doi:10.1063/1.114080. https://resolver.caltech.edu/CaltechAUTHORS:20120215-093505302
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Abstract
Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were found to be broadly similar. The electroluminescent devices have an onset for emission in reverse bias of approximately −10 V, suggesting that the mechanism for carrier excitation may be an avalanche breakdown caused by injection of hot carriers into the oxide. The electroluminescent emission was stable for periods exceeding 6 h.
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| Additional Information: | © 1995 American Institute of Physics. Received 28 June 1994; accepted for publication 30 November 1994. This work was supported by the U.S. Department of Energy under Grant DE-FG03-89ER45395. One of us (K.V.S.) acknowledges support from a J.S. Fluor Foundation Fellowship. | |||||||||
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| Issue or Number: | 6 | |||||||||
| Classification Code: | PACS: 85.60.Jb; 78.60.Fi; 78.66.Sq | |||||||||
| DOI: | 10.1063/1.114080 | |||||||||
| Record Number: | CaltechAUTHORS:20120215-093505302 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20120215-093505302 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 29299 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Tony Diaz | |||||||||
| Deposited On: | 21 Mar 2012 20:27 | |||||||||
| Last Modified: | 09 Nov 2021 17:05 |
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