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Noise processes in nanomechanical resonators

Cleland, A. N. and Roukes, M. L. (2002) Noise processes in nanomechanical resonators. Journal of Applied Physics, 92 (5). pp. 2758-2769. ISSN 0021-8979. doi:10.1063/1.1499745.

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Nanomechanical resonators can be fabricated to achieve high natural resonance frequencies, approaching 1 GHz, with quality factors in excess of 10^(4). These resonators are candidates for use as highly selective rf filters and as precision on-chip clocks. Some fundamental and some nonfundamental noise processes will present limits to the performance of such resonators. These include thermomechanical noise, Nyquist-Johnson noise, and adsorption-desorption noise; other important noise sources include those due to thermal fluctuations and defect motion-induced noise. In this article, we develop a self-contained formalism for treating these noise sources, and use it to estimate the impact that these noise processes will have on the noise of a model nanoscale resonator, consisting of a doubly clamped beam of single-crystal Si with a natural resonance frequency of 1 GHz.

Item Type:Article
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Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2002 American Institute of Physics. Received 15 February 2002; accepted 18 June 2002. The authors acknowledge the financial support provided by the National Science Foundation XYZ-On-A-Chip Program, Contract No. ECS-9980734, by the Army Research Office, and by the Research Corporation through a Research Innovation Award.
Funding AgencyGrant Number
Army Research Office (ARO)UNSPECIFIED
Research CorporationUNSPECIFIED
Subject Keywords:silicon; elemental semiconductors; nanotechnology; micromechanical resonators; semiconductor device noise; thermal noise; adsorption; desorption
Issue or Number:5
Record Number:CaltechAUTHORS:CLEjap02
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2950
Deposited By: Tony Diaz
Deposited On:08 May 2006
Last Modified:08 Nov 2021 19:52

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