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Ultraclean Two-Stage Aerosol Reactor for Production of Oxide-Passivated Silicon Nanoparticles for Novel Memory Devices

Ostraat, Michele L. and De Blauwe, Jan W. and Green, Martin L. and Bell, L. Douglas and Atwater, Harry A. and Flagan, Richard C. (2001) Ultraclean Two-Stage Aerosol Reactor for Production of Oxide-Passivated Silicon Nanoparticles for Novel Memory Devices. Journal of the Electrochemical Society, 148 (5). G265-G270. ISSN 0013-4651. doi:10.1149/1.1360210.

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Silicon nanoparticle-based floating gate metal oxide semiconductor field effect devices are attractive candidates for terabit cm^–2 density nonvolatile memory applications. We have designed an ultraclean two-stage aerosol process reactor and 200 mm wafer deposition chamber in order to integrate Si/SiO2 nanoparticles into memory devices. In the first stage, silicon nanoparticles are synthesized by thermal decomposition of silane gas in a reactor that has been optimized to produce nonagglomerated nanoparticles at rates sufficient for layer deposition. In the second stage, the silicon particles are passivated with thermal oxide that partly consumes the particle. This two-stage aerosol reactor has been integrated to a 200 mm silicon wafer deposition chamber that is contained within a class 100 cleanroom environment. This entire reactor system conforms to rigorous cleanliness specifications such that we can control transition metal contamination to as good as 10^10 atoms cm^–2. The deposition chamber has been designed to produce a controllable particle density profile along a 200 mm wafer where particles are thermophoretically deposited uniformly over three-quarters of the wafer. Thus, we now have the capability to deposit controlled densities of oxide-passivated silicon nanoparticles onto 200 mm silicon wafers for production of silicon nanoparticle memory devices.

Item Type:Article
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Atwater, Harry A.0000-0001-9435-0201
Flagan, Richard C.0000-0001-5690-770X
Additional Information:© 2001 The Electrochemical Society. (Received October 4, 2000) This work was supported by NSF grant no. DMR-9871850. The California Institute of Technology assisted in meeting the publication costs of this article.
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Subject Keywords:silicon; elemental semiconductors; nanostructured materials; spray coating techniques; MOSFET; random-access storage; pyrolysis
Issue or Number:5
Record Number:CaltechAUTHORS:OSTjes01
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:2995
Deposited By: Archive Administrator
Deposited On:10 May 2006
Last Modified:08 Nov 2021 19:52

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