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Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation

Gasser, S. M. and Ruiz, R. and Kolawa, E. and Nicolet, M.-A. (1999) Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation. Journal of the Electrochemical Society, 146 (4). pp. 1546-1548. ISSN 0013-4651. doi:10.1149/1.1391802.

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Ternary films about 200 nm thick of composition Ru20Si15O65 have been synthesized by reactive rf magnetron sputtering of a Ru1Si1 target in an argon-oxygen gas. As-deposited, the films are X-ray-amorphous. Their atomic density is 8.9 × 10^22/cm^3 (5.1 g/cm^3), and their electrical resistivity is in the range of 2 mOmega cm. After annealing in dry oxygen at 600°C for 30 min, micron-sized grains of RuO2 grow out of the film and volatile RuO4 escapes. The significance of these results is discussed.

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Additional Information:©1999 The Electrochemical Society. (Received July 6, 1998) Dr. Martina Hüber established the connection with Dr. Harry Gray, who suggested light absorption spectroscopy to identify RuO4. The authors express their appreciation to them for helpful discussions. Technical assistance from Rob Gorris is gratefully acknowledged. Financial support for this study was provided by the Center for Integrated Space Microsystems at JPL/NASA and is gratefully acknowledged. California Institute of Technology assisted in meeting the publication costs of this aricle.
Issue or Number:4
Record Number:CaltechAUTHORS:GASjes99
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3000
Deposited By: Archive Administrator
Deposited On:10 May 2006
Last Modified:08 Nov 2021 19:52

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