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Error-Correcting Schemes with Dynamic Thresholds in Nonvolatile Memories

Zhou, Hongchao and Jiang, Anxiao (Andrew) and Bruck, Jehoshua (2011) Error-Correcting Schemes with Dynamic Thresholds in Nonvolatile Memories. In: 2011 IEEE International Symposium on Information Theory Proceedings. IEEE , Piscataway, NJ, pp. 2143-2147. ISBN 978-1-4577-0596-0.

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Predetermined fixed thresholds are commonly used in nonvolatile memories for reading binary sequences, but they usually result in significant asymmetric errors after a long duration, due to voltage or resistance drift. This motivates us to construct error-correcting schemes with dynamic reading thresholds, so that the asymmetric component of errors are minimized. In this paper, we discuss how to select dynamic reading thresholds without knowing cell level distributions, and present several error-correcting schemes. Analysis based on Gaussian noise models reveals that bit error probabilities can be significantly reduced by using dynamic thresholds instead of fixed thresholds, hence leading to a higher information rate.

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Bruck, Jehoshua0000-0001-8474-0812
Additional Information:© 2011 IEEE. Date of Current Version: 03 October 2011. This work was supported in part by the NSF CAREER Award CCF-0747415, the NSF grant ECCS-0802107, and by an NSF-NRI award.
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NSF CAREER AwardCCF-0747415
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INSPEC Accession Number12300248
Record Number:CaltechAUTHORS:20120406-094817699
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Official Citation:Hongchao Zhou; Anxiao Jiang; Bruck, J.; , "Error-correcting schemes with dynamic thresholds in nonvolatile memories," Information Theory Proceedings (ISIT), 2011 IEEE International Symposium on , vol., no., pp.2143-2147, July 31 2011-Aug. 5 2011 doi: 10.1109/ISIT.2011.6033936 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:30007
Deposited By: Ruth Sustaita
Deposited On:06 Apr 2012 16:58
Last Modified:22 Nov 2019 09:58

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