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On the Origin of Charging Damage during Etching of Antenna Structures

Hwang, Gyeong S. and Giapis, Konstantinos P. (1997) On the Origin of Charging Damage during Etching of Antenna Structures. Journal of the Electrochemical Society, 144 (10). L285-L287. ISSN 0013-4651. doi:10.1149/1.1838011.

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Monte Carlo simulations of charging and profile evolution in patterned antenna structures during etching in high-density plasmas reveal a rapid change in the potential of the lines at end point, which causes a surge in electron tunneling through thin gate oxides and possibly charging damage. The condition of the substrate (grounded vs. floating) determines the magnitude of the surge and whether it will be followed by a steady-state current until all lines of the pattern become disconnected. A reduction in damage is possible by controlling the substrate condition, which may be assessed through notching experiments.

Item Type:Article
Related URLs:
URLURL TypeDescription
Hwang, Gyeong S.0000-0002-5538-9426
Giapis, Konstantinos P.0000-0002-7393-298X
Additional Information:© 1997 The Electrochemical Society, Inc. Manuscript received July 15, 1997. This work was supported by an NSF-Career Award and a Camille Dreyfus Teacher-Scholar Award to K.P.G. An Applied Materials Scholarship in partial support of G.S.H. is gratefully acknowledged. California Institute of Technology assisted in meeting the publication costs of this article.
Funding AgencyGrant Number
Camille and Henry Dreyfus FoundationUNSPECIFIED
Applied MaterialsUNSPECIFIED
Subject Keywords:etching; antenna testing; antennas in plasma; tunnelling; plasma applications
Issue or Number:10
Record Number:CaltechAUTHORS:HWAjes97a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3003
Deposited By: Archive Administrator
Deposited On:10 May 2006
Last Modified:08 Nov 2021 19:52

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