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Modeling of charging damage during interlevel oxide deposition in high-density plasmas

Hwang, Gyeong S. and Giapis, Konstantinos P. (1998) Modeling of charging damage during interlevel oxide deposition in high-density plasmas. Journal of Applied Physics, 84 (1). pp. 154-160. ISSN 0021-8979. doi:10.1063/1.368012.

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Monte Carlo simulations of pattern-dependent charging during interlevel dielectric (ILD) deposition in high-density plasmas reveal that the initial conformality of the ILD film plays a crucial role in metal line charging up and the subsequent degradation to the buried gate oxide to which the metal line is connected. Line charging occurs when the top dielectric is thick enough to prevent tunneling currents while the sidewall dielectric thickness still allows tunneling currents to flow to the metal line; the differential charging of the sidewalls, which induces the latter currents, is caused by electron shading. The results suggest that charging can be reduced by depositing a more conformal ILD film around the metal line and/or by increasing the ability of the film surface to dissipate charge.

Item Type:Article
Related URLs:
URLURL TypeDescription
Hwang, Gyeong S.0000-0002-5538-9426
Giapis, Konstantinos P.0000-0002-7393-298X
Additional Information:© 1998 American Institute of Physics. (Received 3 February 1998; accepted 3 April 1998) This work was supported by a NSF-Career Award and a Camille Dreyfus Teacher-Scholar Award to K.P.G.
Funding AgencyGrant Number
Camille and Henry Dreyfus FoundationUNSPECIFIED
Subject Keywords:plasma deposition; sputter etching; Monte Carlo methods
Issue or Number:1
Record Number:CaltechAUTHORS:HWAjap98a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3006
Deposited By: Archive Administrator
Deposited On:10 May 2006
Last Modified:08 Nov 2021 19:52

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