Sheldon, Matthew T. and Eisler, Carissa N. and Atwater, Harry A. (2012) GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability. Advanced Energy Materials, 2 (3). pp. 339-344. ISSN 1614-6832. doi:10.1002/aenm.201100666. https://resolver.caltech.edu/CaltechAUTHORS:20120427-142915330
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Abstract
A chemical passivation strategy to improve durability in GaAs solar cells is described. Trioctylphosphine sulfide (TOP:S) is identified among a promising new class of surfactants for enhanced performance and longevity of GaAs cells. Light-beam induced current measurements (LBIC) and other studies show treatment with TOP:S mitigates efficiency losses at unpassivated sidewalls and induced fractures.
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| Additional Information: | © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Issue published online: 13 Mar. 2012; Article first published online: 7 Feb. 2012; Manuscript Received: 3 Nov. 2011. This work was supported by the Department of Energy under grant DE-FG02-07ER46405 and the DARPA Portable Photovoltaics program. We thank Dr. Brendan Kayes and Alta Devices for providing the GaAs solar cells used in this study. | |||||||||
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| Subject Keywords: | solar cells; GaAs; passivation; sulfur; photovoltaics | |||||||||
| Issue or Number: | 3 | |||||||||
| DOI: | 10.1002/aenm.201100666 | |||||||||
| Record Number: | CaltechAUTHORS:20120427-142915330 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20120427-142915330 | |||||||||
| Official Citation: | Sheldon, M. T., Eisler, C. N. and Atwater, H. A. (2012), GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability. Adv. Energy Mater., 2: 339–344. doi: 10.1002/aenm.201100666 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 30382 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Jason Perez | |||||||||
| Deposited On: | 30 Apr 2012 17:40 | |||||||||
| Last Modified: | 09 Nov 2021 19:47 |
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