Electrical behavior of GaAs–AlAs heterostructures

Abstract

We report an experimental study of the electrical behavior of GaAs–AlAs–GaAs heterostructures grown by metal–organic chemical vapor deposition. The structures consisted of a layer of AlAs several thousand angstroms thick sandwiched between layers of GaAs which were a few microns thick. The top layer of GaAs was doped degenerately n-type with Se, while the bottom layer was nondegenerately doped. Capacitance–voltage (C–V) and curent–voltage (I–V) curves were obtained as a function of temperature, illumination, and rate of data acquisition. Deep-level transient spectroscopy (DLTS) measurements were also made. The C–V showed hysteresis near zero bias with the capacitance being larger when the voltage was swept from reverse to forward bias in the dark. The C–V displayed a light sensitive peak near zero bias. With illumination, the capacitance was greater, and no hysteresis was observed. We explain these phenomena as being due to deep levels near the AlAs–GaAs interface; DLTS has confirmed this. I–V curves taken in darkness also showed hysteresis. We take this as further evidence of deep levels. Additionally, capacitance failed to level off in reverse bias, indicating a lack of inversion in the samples.