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Vertically emitting annular Bragg lasers using polymer epitaxial transfer

Green, William M. J. and Scheuer, Jacob and DeRose, Guy and Yariv, Amnon (2004) Vertically emitting annular Bragg lasers using polymer epitaxial transfer. Applied Physics Letters, 85 (17). pp. 3669-3671. ISSN 0003-6951.

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Fabrication of a planar semiconductor microcavity, composed of cylindrical Bragg reflectors surrounding a radial defect, is demonstrated. A versatile polymer bonding process is used to transfer active InGaAsP resonators to a low-index transfer substrate. Vertical emission of in-plane modes lasing at telecom wavelengths is observed under pulsed optical excitation with a submilliwatt threshold.

Item Type:Article
Additional Information:Copyright © 2004 American Institute of Physics. Received 24 May 2004; accepted 23 August 2004. The authors would like to thank Dr. Axel Scherer and Dr. Oskar Painter for providing access to their fabrication facilities. George Paloczi and Dr. Reginald Lee are also acknowledged for fruitful discussions. This work was supported by the National Science Foundation and DARPA.
Subject Keywords:indium compounds; gallium arsenide; III-V semiconductors; semiconductor quantum wells; quantum well lasers; surface emitting lasers; microcavity lasers; distributed Bragg reflector lasers; bonding processes; electron beam lithography; photoluminescence
Record Number:CaltechAUTHORS:GREapl04
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3123
Deposited By: Tony Diaz
Deposited On:16 May 2006
Last Modified:26 Dec 2012 08:52

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