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Growth and characteristics of type-II InAs/GaSb superlattice-based detectors

Khoshakhlagh, A. and Ting, D. Z. and Soibel, A. and Höglund, L. and Nguyen, J. and Keo, S. A. and Liao, A. and Gunapala, S. D. (2011) Growth and characteristics of type-II InAs/GaSb superlattice-based detectors. In: Infrared Remote Sensing and Instrumentation XIX. Proceedings of SPIE. No.8154. Society of Photo-Optical Instrumentation Engineers (SPIE) , Bellingham, WA, Art. No. 81540K. ISBN 755013112. https://resolver.caltech.edu/CaltechAUTHORS:20120507-092732767

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Abstract

We report on growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design. The unipolar barriers on either side of the absorber in the CBIRD design in combination with the type-II InAs/GaSb superlattice material system are expected to outperform traditional III-V LWIR imaging technologies and offer significant advantages over the conventional II-VI material based FPAs. The innovative design of CBIRDS, low defect density material growth, and robust fabrication processes have resulted in the development of high performance long wave infrared (LWIR) focal plane arrays at JPL.


Item Type:Book Section
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http://dx.doi.org/10.1117/12.894286DOIUNSPECIFIED
Additional Information:© 2011 SPIE. Online Sep 16, 2011. The authors thank C. J. Hill for helpful discussions, and M. Tidrow, R. Liang, M. Herman and E. Kolawa for encouragement and support. The research described in this publication was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.
Subject Keywords:Unipolar barrier, infrared detectors, superlattice, long-wave
Series Name:Proceedings of SPIE
Issue or Number:8154
Record Number:CaltechAUTHORS:20120507-092732767
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20120507-092732767
Official Citation:A. Khoshakhlagh, D. Z. Ting, A. Soibel, L. Hoglund, J. Nguyen, S. A. Keo, A. Liao and S. D. Gunapala, "Growth and characteristics of type-II InAs/GaSb superlattice-based detectors", Proc. SPIE 8154, 81540K (2011); http://dx.doi.org/10.1117/12.894286
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31324
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:07 May 2012 21:34
Last Modified:03 Oct 2019 03:50

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