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Graphene−Graphite Oxide Field-Effect Transistors

Standley, Brian and Mendez, Anthony and Schmidgall, Emma and Bockrath, Marc (2012) Graphene−Graphite Oxide Field-Effect Transistors. Nano Letters, 12 (3). pp. 1165-1169. ISSN 1530-6984. doi:10.1021/nl2028415.

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Graphene’s high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO_2 or HfO_2. In contrast, we have studied the use of an ultrathin layered material, graphene’s insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO_2, typically ~1–3 × 10^8 V/m, while its dielectric constant is slightly higher, κ ≈ 4.3.

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Additional Information:© 2012 American Chemical Society. Published In Issue March 14, 2012; Article ASAP: March 01, 2012; Received: August 16, 2011; Revised: January 31, 2012. We thank Chun Ning Lau for helpful discussions. M.B. acknowledges support from the ONR, GRC, NSF-NRI, NSFDMR 1106358, and ONR/DMEA H94003-10-2-1003.
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NSFDMR 1106358
Subject Keywords:graphene; graphite oxide; eld-effect transistor; layered dielectric
Issue or Number:3
Record Number:CaltechAUTHORS:20120508-104848198
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Official Citation:Graphene–Graphite Oxide Field-Effect Transistors Brian Standley, Anthony Mendez, Emma Schmidgall, and Marc Bockrath Nano Letters 2012 12 (3), 1165-1169
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31347
Deposited By: Jason Perez
Deposited On:08 May 2012 21:34
Last Modified:09 Nov 2021 19:51

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