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Transistor oscillator and amplifier grids

Weikle, Robert M., II and Kim, Moonil and Hacker, Jonathan B. and De Lisio, Michael P. and Popvić, Zoya B. and Rutledge, David B. (1992) Transistor oscillator and amplifier grids. Proceedings of the IEEE, 80 (11). pp. 1800-1809. ISSN 0018-9219. doi:10.1109/5.175256.

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Although quasi-optical techniques are applicable to a large variety of solid-state devices, special attention is given to transistors, which are attractive because they can be used as either amplifiers or oscillators. Experimental results for MESFET bar-grid and planar grid oscillators are presented. A MESFET grid amplifier that receives only vertically polarized waves at the input and radiates horizontally polarized waves at the output is discussed. These planar grids can be scaled for operation at millimeter- and submillimeter-wave frequencies. By using modern IC fabrication technology, planar grid oscillators and amplifiers containing thousands of devices can be built, thereby realizing an efficient means for large-scale power combining.

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Additional Information:© Copyright 1992 IEEE. Reprinted with permission Invited Paper. Manuscript received October 4, 1991; revised February 26, 1992. This research was supported by the Army Research Office, the Northrop Corporation, and a fellowship from the Rockwell International Trust. J. Hacker holds an NSERC Fellowship from Canada and M. De Lisio holds an NSF Fellowship.
Subject Keywords:MMIC, Schottky gate field effect transistors, electromagnetic wave polarisation, field effect integrated circuits, microwave amplifiers, microwave oscillators, submillimetre wave devices
Issue or Number:11
Record Number:CaltechAUTHORS:WEIprocieee92
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3137
Deposited By: Archive Administrator
Deposited On:16 May 2006
Last Modified:08 Nov 2021 19:53

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