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Quasi-optical watt-level millimeter-wave monolithic solid-state diode-grid frequency multipliers

Hwu, R. J. and Sadwick, L. P. and Luhmann, N. C., Jr. and Rutledge, D. B. and Sokolich, M. and Hancock, B. (1989) Quasi-optical watt-level millimeter-wave monolithic solid-state diode-grid frequency multipliers. In: 1989 IEEE MTT-S International Microwave Symposium digest : June 13-15, 1989, Long Beach Convention Center, Long Beach, California. IEEE , Piscataway, NJ, pp. 1069-1072.

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A monolithic planar array containing thousands of GaAs Barrier-Intrinsic-N^+ diodes have produced one watt output power at 100 GHz in a tripler configuration. Tripling efficiency of 8.5% has been obtained from approximately 4-mW incident power on each diode, in excellent agreement with the predictions of large-signal nonlinear circuit analysis of frequency multiplication. The device performance is limited by the parameters of the fabricated diodes. Significant improvement is expected with realizable diode parameters and optimized pumping condition.

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Additional Information:© 1989 IEEE. Date of Current Version: 06 August 2002. This work was supported by TRW under the California MICRO program.
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Record Number:CaltechAUTHORS:20120524-095106887
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Official Citation:Hwu, R.J.; Sadwick, L.P.; Luhmann, N.C., Jr.; Rutledge, D.B.; Sokolich, M.; Hancock, B.; , "Quasi-optical watt-level millimeter-wave monolithic solid-state diode-grid frequency multipliers," Microwave Symposium Digest, 1989., IEEE MTT-S International , vol., no., pp.1069-1072 vol.3, 13-15 Jun 1989 doi: 10.1109/MWSYM.1989.38907 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31628
Deposited By: Tony Diaz
Deposited On:24 May 2012 22:01
Last Modified:27 Oct 2022 21:44

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