Thuillard, M. and Tran, L. T. and Nieh, C. W. and Nicolet, M-A. (1989) Thermal reaction of Al/Ti bilayers with contaminated interface. Journal of Applied Physics, 65 (6). pp. 2553-2556. ISSN 0021-8979. doi:10.1063/1.342780. https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572
![[img]](https://authors.library.caltech.edu/style/images/fileicons/application_pdf.png)
|
PDF
- Published Version
See Usage Policy. 508kB |
Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572
Abstract
We have studied some new aspects of thermal reactions in Al/Ti bilayers in which the interface is purposely contaminated with oxygen. After annealing at a temperature of 460 °C, an Al_3Ti compound forms at the interface, moreover some Al diffuses through the Ti to form a compound at the free surface. The amount of aluminum at the free surface can be as large as at the interface. Nucleation and lateral growth of Al_3Ti at the interface are locally unfavorable. This results in a competition between the lateral growth of Al_3Ti at the Al/Ti interface and the diffusion of Al to the free surface. Once full coverage by Al_3Ti is obtained at the Al/Ti interface, the diffusion of Al to the surface becomes negligible.
| Item Type: | Article | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Related URLs: |
| |||||||||
| Additional Information: | © 1989 American Institute of Physics. Received 23 May 1988; accepted for publication 14 November 1988. Technical assistance from Rob Gorris and Bart Stevens is gratefully acknowledged. The financial support was provided in part by the Office of Naval Research under Contract No. N000 14-84-K-0275. We also thank the Swiss National Science Foundation for a fellowship to one of us (M. Thuillard). | |||||||||
| Funders: |
| |||||||||
| Subject Keywords: | SURFACE REACTIONS, ALUMINIUM, TITANIUM, INTERFACE STRUCTURE, FILM GROWTH, THIN FILMS, ALUMINIUM COMPOUNDS, TITANIUM COMPOUNDS, DIFFUSION, ATOM TRANSPORT, CHEMICAL COMPOSITION, NUCLEATION, HIGH TEMPERATURE, SURFACE CONTAMINATION, BILAYERS | |||||||||
| Issue or Number: | 6 | |||||||||
| Classification Code: | PACS: 68.35.Fx; 68.35.Dv; 81.15.-z; 82.65.+r | |||||||||
| DOI: | 10.1063/1.342780 | |||||||||
| Record Number: | CaltechAUTHORS:20120530-151638572 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572 | |||||||||
| Official Citation: | Thermal reaction of Al/Ti bilayers with contaminated interface M. Thuillard, L. T. Tran, C. W. Nieh, and M‐A. Nicolet J. Appl. Phys. 65, 2553 (1989); http://dx.doi.org/10.1063/1.342780 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 31726 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Ruth Sustaita | |||||||||
| Deposited On: | 30 May 2012 22:32 | |||||||||
| Last Modified: | 09 Nov 2021 19:59 |
Repository Staff Only: item control page
