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Fracture strain of LPCVD polysilicon

Tai, Y. C. and Muller, R. S. (1988) Fracture strain of LPCVD polysilicon. In: 1988 IEEE Solid-State Sensor and Actuator Workshop, Technical Digest. IEEE , Piscataway, NJ, pp. 88-91. ISBN 47874515.

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A polysilicon bridge-slider structure in which one end of the bridge is fixed and the other is connected to a plate sliding in two flanged guideways, is designed and fabricated to study the strain at fracture of LPCVD polysilicon. In the experiments, a mechanical probe is used to push against the plate end, compressing and forcing the bridge to buckle until it breaks. The distance that the plate needs to be pushed to break the bridge is recorded. Nonlinear beam theory is then used to interpret the results of these axially-loaded-bridge experiments. The measured average fracture strain of as-deposited LPCVD polysilicon is 1.72%. High-temperature annealing of the bridge-sliders at 1000°C for 1 h decreases the average fracture strain to 0.93%.

Item Type:Book Section
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Tai, Y. C.0000-0001-8529-106X
Additional Information:© 1988 IEEE. Date of Current Version: 06 August 2002.
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INSPEC Accession Number3278353
Record Number:CaltechAUTHORS:20120607-142008892
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Official Citation:Tai, Y.C.; Muller, R.S.; , "Fracture strain of LPCVD polysilicon," Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE , vol., no., pp.88-91, 6-9 Jun 1988 doi: 10.1109/SOLSEN.1988.26440 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:31843
Deposited By: Tony Diaz
Deposited On:07 Jun 2012 21:57
Last Modified:09 Nov 2021 20:01

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