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X‐ray diffraction characterization of multilayer semiconductor structures

Vreeland, Thad, Jr. and Paine, Bruce M. (1986) X‐ray diffraction characterization of multilayer semiconductor structures. Journal of Vacuum Science and Technology A, 4 (6). pp. 3153-3159. ISSN 0734-2101. doi:10.1116/1.573645.

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The analysis of double‐crystal x‐ray rocking curves of single‐crystal layered structures can give valuable information on layer strains, displacement of atoms from normal lattice sites (which reduces the structure factor), crystallographic misorientations, and crystal defects. Both strains and misorientations cause shifts in the Bragg angle. These two effects are readily separated using two or more rocking curves with appropriate hkl reflections. The thickness of a layer and its structure factor affect the integrated intensity of a shifted Bragg peak while the width of the peak is affected by the thickness of the layer and its defect content. Calculation of the x‐ray rocking curve of a crystal with strain, structure factor, and damage (displaced atoms) is done using the kinematical or single‐scattering theory for thin layers or the dynamical theory for thick strongly diffracting layers. The problem of uniqueness of the rocking curve calculated for a given structure is discussed. Application of the rocking curve technique to the characterization of multilayer semiconductor structures is presented. The applications include Si homoepitaxy and heteroepitaxy, metal silicide on Si, GaAs implanted with 0.3–15 MeV ions, quaternary compound laser structures, AlGaAs/GaAs and HgCdTe/CdTe superlattices, and strains in polycrystalline or noncrystalline films on a thin single crystal.

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Additional Information:© 1986 American Vacuum Society. Received 11 April 1986; accepted 23 May 1986. The rocking curve work at Caltech was initiated by Dr. V. S. Speriosu, now with the IBM Almaden Research Laboratory, San Jose, CA. Our rocking curve system was designed and built with DARPA support. Research support has been provided by DARPA (MDA 903-82-C-0348), NSF (DMR J. Vac. Sci. Technol. A, Vol. 4, No.6, Nov/Dec 1986 83-18274 and DMR 84-21119), and the Semiconductor Research Corporation (No. 85-04-059). The authors wish to thank Dr. Speriosu for introducing this technique to them, and the supporting agencies which made this work possible.
Funding AgencyGrant Number
Defense Area Research Projects Agency (DARPA)MDA 903-82-C-0348
NSFDMR 83-18274
NSFDMR 84-21119
Semiconductor Research Corporation85-04-059
Subject Keywords:Multilayers; crystal structure; crystal orientation; crystal defects; thin films; silicides; silicon; gallium arsenides; aluminum arsenides; mercury tellurides; cadmium tellurides; superlattices; x-ray diffraction analysis; strains
Issue or Number:6
Classification Code:PACS: 68.65.-k; 68.55.-a; 68.60.Bs; 68.55.Ln
Record Number:CaltechAUTHORS:20120627-095239074
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Official Citation:X-ray diffraction characterization of multilayer semiconductor structures Thad Vreeland, Jr. and Bruce M. Paine, J. Vac. Sci. Technol. A 4, 3153 (1986), DOI:10.1116/1.573645
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32130
Deposited On:27 Jun 2012 18:57
Last Modified:09 Nov 2021 21:24

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