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Inelastic tunneling characteristics of AIAs/GaAs heterojunction barriers

Collins, R. T. and Lambe, J. and McGill, T. C. and Burnham, R. D. (1984) Inelastic tunneling characteristics of AIAs/GaAs heterojunction barriers. Journal of Vacuum Science and Technology B, 2 (2). pp. 201-202. ISSN 1071-1023. doi:10.1116/1.582779.

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Additional Information:© 1984 American Vacuum Society. Received 20 October 1983. Accepted 8 February 1984. The authors wish to acknowledge D. L. Smith, C. Mailhiot, T. L. Paoli, and W. Streifer for valuable discussions and are grateful to H. Chung, R. D. Yingling, Jr., F. Endicott, M. Bernstein, M. Mosby, J. Tramontana, J. Walker, A. Alimonda, G. L. Harnagel, and R. Ritter for technical assistance with this work. This study was supported in part by the Office of Naval Research under Contract No. N00014-82-K-0556.
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Office of Naval Research (ONR)N00014-82-K-0556
Issue or Number:2
Classification Code:PACS: 73.40.Lq, 73.40.Gk, 71.38.-k
Record Number:CaltechAUTHORS:20120629-144901442
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Official Citation:Summary Abstract: Inelastic tunneling characteristics of AlAs/GaAs heterojunction barriers R. T. Collins, J. Lambe, T. C. McGill, and R. D. Burnham J. Vac. Sci. Technol. B 2, 201 (1984);
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32216
Deposited By: Ruth Sustaita
Deposited On:02 Jul 2012 15:33
Last Modified:09 Nov 2021 21:25

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