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Narrow stripe AlGaAs lasers using double current confinement

Blauvelt, H. and Margalit, S. and Yariv, A. (1982) Narrow stripe AlGaAs lasers using double current confinement. Applied Physics Letters, 41 (10). pp. 903-905. ISSN 0003-6951. doi:10.1063/1.93349.

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Gain guided AlGaAs lasers in which the current is restricted to flow between two narrow stripes have been fabricated. The double current confinement configuration, which is fabricated by a selective meltback‐growth technique, enables the current injection to be restricted to a very narrow section of the active layer. These lasers exhibit very strong antiguiding and operate in many longitudinal modes, which are characteristics of narrow stripe lasers. Potential applications of the twin vertical stripe configuration include arrays of optically coupled lasers and, if a real index waveguiding mechanism can be combined with double current confinement, low threshold lasers.

Item Type:Article
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Additional Information:© 1982 American Institute of Physics. Received 6 July 1982; accepted for publication 24 August 1982. This research was supported by the National Science Foundation and the Office of Naval Research.
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Subject Keywords:semiconductor lasers, aluminium arsenides, gallium arsenides, configuration, electric currents, confinement, gain, crystal growth, melting, layers, oscillation modes, experimental data
Issue or Number:10
Classification Code:PACS: 42.55.Px; 42.79.Sz
Record Number:CaltechAUTHORS:20120716-105036945
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32471
Deposited By: Tony Diaz
Deposited On:16 Jul 2012 18:01
Last Modified:09 Nov 2021 21:27

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