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Improvement of thermally formed nickel silicide by ion irradiation

Wieluński, L. S. and Lien, C. -D. and Liu, B. X. and Nicolet, M.-A. (1982) Improvement of thermally formed nickel silicide by ion irradiation. Journal of Vacuum Science and Technology, 20 (2). pp. 182-185. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120716-160347437

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Abstract

A significant improvement of the lateral uniformity of thermally formed Ni_(2)Si layers has been observed after low‐dose (10^(13)~3 × 10^(14) ion/cm^2) Xe irradiation of an As‐deposited Ni film. Measurements have also been made on samples that contained a thin impurity layer formed intentionally between the silicon substrate and the evaporated nickel film. The impurity layer was thick enough to prevent thermal silicide formation in unirradiated samples, but in irradiated samples, the silicide formation was not prevented. Similar results were obtained for As implantations. We attribute this effect to ion mixing of the interfacial layer. These results demonstrate that a low‐dose irradiation can render the process of silicide formation by thermal annealing more tolerant to interfacial impurities. The concept is of potential significance to VLSI technology.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://link.aip.org/link/doi/10.1116/1.571353DOIUNSPECIFIED
http://avspublications.org/jvst/resource/1/jvstal/v20/i2/p182_s1PublisherUNSPECIFIED
Additional Information:© 1982 American Vacuum Society. Received 14 August 1981; accepted 14 September 1981. The authors thank C. A. Evans, Jr., and R. D. Blattner, of Charles Evans & Associates, for the SIMS analysis of two samples to characterize the interfacial impurities. S. S. Lau, of the University of California at San Diego, contributed many helpful discussions; and G. B. Larrabee and S. Matteson, of Texas Instruments, encouraged us to proceed with this investigation. We gratefully acknowledge these contributions. The work was executed under the benevolent U. R. Fund of the Bohmische Physical Society (B. M. Ullrich). The implantation aspect of this study was financially supported by the U. S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D. Bickler).
Funders:
Funding AgencyGrant Number
Böhmische Physical Society U. R. FundUNSPECIFIED
Department of Energy (DOE)UNSPECIFIED
NASAUNSPECIFIED
Subject Keywords:nickel silicides; layers; low dose irradiation; xenon; high temperature; annealing; nickel; silicon; substrates; thin films; fabrication; implantation; arsenic
Issue or Number:2
Classification Code:PACS: 68.35.-p; 68.55.-a; 85.40.-e; 81.05.Bx
Record Number:CaltechAUTHORS:20120716-160347437
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20120716-160347437
Official Citation:Improvement of thermally formed nickel silicide by ion irradiation L. S. Wielunski, C-D. Lien, B. X. Liu, and M-A. Nicolet, J. Vac. Sci. Technol. 20, 182 (1982), DOI:10.1116/1.571353
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32488
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:17 Jul 2012 14:37
Last Modified:03 Oct 2019 04:01

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