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Energy spectra of donors in GaAs-Ga_(1-x)Al_(x)As quantum well structures in the effective mass approximation

Mailhiot, C. and Chang, Yia-Chung and McGill, T. C. (1982) Energy spectra of donors in GaAs-Ga_(1-x)Al_(x)As quantum well structures in the effective mass approximation. Journal of Vacuum Science and Technology, 21 (2). pp. 519-523. ISSN 0022-5355. https://resolver.caltech.edu/CaltechAUTHORS:20120717-092705520

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Abstract

We present the results of a study of the energy spectrum of the ground state and the low-lying excited states for shallow donors in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite layers of Ga_(1-x)Al_(x)As. The effect of the position of the impurity atom within central GaAs slab is investigated for different slab thicknesses and alloy compositions. Two limiting cases are presented: one in which the impurity atom is located at the center of the quantum well (on-center impurity), the other in which the impurity atom is located at the edge of the quantum well (on-edge impurity). Both the on-center and the on-edge donor ground state are bound for all values of GaAs slab thicknesses and alloy compositions. The alloy composition x is varied between 0.1 and 0.4. In this composition range, Ga_(1-x)Al_(x)As is direct, and the single-valley effective-mass theory is a valid technique for treating shallow donor states. Calculations are carried out in the case of finite potential barriers determined by realistic conduction-band offsets.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.571751DOIUNSPECIFIED
http://avspublications.org/jvst/resource/1/jvstal/v21/i2/p519_s1PublisherUNSPECIFIED
Additional Information:© 1982 American Vacuum Society. Received 27 January 1982; accepted 5 April 1982. This work was supported by the Army Research Office under Contract No. DAAG29-80-C-0103. One of us (CM) has been supported by the NSERC of Canada and by the Fonds F.C.A.C. pour l'aide et le soutien à la recherche of Québec. The authors are greatly indebted to G. Bastard and to F. Stem for pointing out the deficiencies of a previous calculation using a less adequate variational basis set than the one presented here. The authors also wish to acknowledge C. A. Swarts for many very helpful discussions
Funders:
Funding AgencyGrant Number
Army Research Office (ARO)DAAG29-80-C-0103
NSERC (Canada)UNSPECIFIED
Fonds F.C.A.C. pour l'aide et le soutien à la recherche of QuébecUNSPECIFIED
Subject Keywords:gallium arsenides; aluminium; donors; ground states; slabs; energy spectra; semiconductor junctions; hamiltonians; superlattices
Issue or Number:2
Classification Code:PACS: 73.40.Lq; 71.18.+y; 71.55.Ht
Record Number:CaltechAUTHORS:20120717-092705520
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20120717-092705520
Official Citation:Energy spectra of donors in GaAs--Ga[sub 1 - x]Al[sub x]As quantum well structures in the effective mass approximation C. Mailhiot, Yia-Chung Chang, and T. C. McGill, J. Vac. Sci. Technol. 21, 519 (1982), DOI:10.1116/1.571751
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32508
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:17 Jul 2012 20:10
Last Modified:03 Oct 2019 04:01

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