Mailhiot, C. and Chang, Yia-Chung and McGill, T. C. (1982) Energy spectra of donors in GaAs-Ga_(1-x)Al_(x)As quantum well structures in the effective mass approximation. Journal of Vacuum Science and Technology, 21 (2). pp. 519-523. ISSN 0022-5355. doi:10.1116/1.571751. https://resolver.caltech.edu/CaltechAUTHORS:20120717-092705520
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Abstract
We present the results of a study of the energy spectrum of the ground state and the low-lying excited states for shallow donors in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite layers of Ga_(1-x)Al_(x)As. The effect of the position of the impurity atom within central GaAs slab is investigated for different slab thicknesses and alloy compositions. Two limiting cases are presented: one in which the impurity atom is located at the center of the quantum well (on-center impurity), the other in which the impurity atom is located at the edge of the quantum well (on-edge impurity). Both the on-center and the on-edge donor ground state are bound for all values of GaAs slab thicknesses and alloy compositions. The alloy composition x is varied between 0.1 and 0.4. In this composition range, Ga_(1-x)Al_(x)As is direct, and the single-valley effective-mass theory is a valid technique for treating shallow donor states. Calculations are carried out in the case of finite potential barriers determined by realistic conduction-band offsets.
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| Additional Information: | © 1982 American Vacuum Society. Received 27 January 1982; accepted 5 April 1982. This work was supported by the Army Research Office under Contract No. DAAG29-80-C-0103. One of us (CM) has been supported by the NSERC of Canada and by the Fonds F.C.A.C. pour l'aide et le soutien à la recherche of Québec. The authors are greatly indebted to G. Bastard and to F. Stem for pointing out the deficiencies of a previous calculation using a less adequate variational basis set than the one presented here. The authors also wish to acknowledge C. A. Swarts for many very helpful discussions | |||||||||
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| Subject Keywords: | gallium arsenides; aluminium; donors; ground states; slabs; energy spectra; semiconductor junctions; hamiltonians; superlattices | |||||||||
| Issue or Number: | 2 | |||||||||
| Classification Code: | PACS: 73.40.Lq; 71.18.+y; 71.55.Ht | |||||||||
| DOI: | 10.1116/1.571751 | |||||||||
| Record Number: | CaltechAUTHORS:20120717-092705520 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20120717-092705520 | |||||||||
| Official Citation: | Energy spectra of donors in GaAs--Ga[sub 1 - x]Al[sub x]As quantum well structures in the effective mass approximation C. Mailhiot, Yia-Chung Chang, and T. C. McGill, J. Vac. Sci. Technol. 21, 519 (1982), DOI:10.1116/1.571751 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 32508 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 17 Jul 2012 20:10 | |||||||||
| Last Modified: | 09 Nov 2021 21:27 |
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