A Caltech Library Service

Surface core excitons in III-V semiconductors

Daw, M. S. and Smith, D. L. and McGill, T. C. (1981) Surface core excitons in III-V semiconductors. Journal of Vacuum Science and Technology, 19 (3). pp. 388-389. ISSN 0022-5355.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


Recent experiments have shown that the cation core excitons on the (110) surface of many III-V semiconductors have very large binding energies.(^1) They are sometimes reported to be bound by as much as ≳0.8 eV, tightly bound compared to bulk binding energies of ≾0.1 eV. To explore this phenomenon, we have calculated the binding energies and oscillator strengths of core excitons on the (110) surface of GaAs, GaSb, GaP, and InP.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© 1981 American Vacuum Society. Received 18 March 1981; accepted 18 June 1981.
Subject Keywords:semiconductor materials; surfaces; excitions; anions; cations; binding energy
Classification Code:PACS: 71.35.-y; 73.20.-r; 72.80.Ey
Record Number:CaltechAUTHORS:20120718-104550766
Persistent URL:
Official Citation:Summary Abstract: Surface core excitons in III--V semiconductors M. S. Daw, D. L. Smith, and T. C. McGill, J. Vac. Sci. Technol. 19, 388 (1981), DOI:10.1116/1.571069
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32549
Deposited By: Aucoeur Ngo
Deposited On:18 Jul 2012 18:07
Last Modified:26 Dec 2012 15:36

Repository Staff Only: item control page