A Caltech Library Service

Alteration of Ni silicide formation by N implantation

Wieluński, L. and Scott, D. M. and Nicolet, M-A. and von Seefeld, H. (1981) Alteration of Ni silicide formation by N implantation. Applied Physics Letters, 38 (2). pp. 106-108. ISSN 0003-6951.

PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


The possibility of controlling the growth of nickel silicide by implanting N into thin Ni films evaporated on Si substrates has been studied using (^4)He backscattering spectrometry. The reaction between Ni and Si is completely halted below annealing temperatures of ∼375 °C by implanted doses of 5×10(^16) N/cm^2. At higher annealing temperatures, localized intermixing takes place. For low doses ≲0.5×10(^16) N/cm^2, the reaction between Ni and Si is that observed for unimplanted samples both in the phase formed (Ni(_2)Si) and in rate of growth. For intermediate doses ∼0.9×10(^16) N/cm^2, the first phase formed corresponds to NiSi, and the growth rate is greatly reduced. These results are explained in terms of a silicon nitride barrier to Ni diffusion forming at the Ni/Si interface.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© 1981 American Institute of Physics. Received 27 June 1980; accepted for publication 24 October 1980. The authors wish to acknowledge R. Fernandez and D. Tonn for their technical assistance. This research was supported in part by the U. S. Army Research Office under the Joint Services Electronic Program Contract No. (DAAG- 29-80-C-0103).
Funding AgencyGrant Number
Army Research Office (ARO)DAAG-29-80-C-0103
Subject Keywords:nickel silicides; synthesis; ion implantation; nitrogen ions; control; films; helium 4; backscattering; high temperature; spectroscopy; silicon; annealing; silicon nitrides; diffusion; interfaces
Classification Code:PACS: 68.55.-a; 82.20.Hf; 81.15.-z
Record Number:CaltechAUTHORS:20120719-133310810
Persistent URL:
Official Citation:Alteration of Ni silicide formation by N implantation L. Wielunski, D. M. Scott, M.-A. Nicolet, and H. von Seefeld, Appl. Phys. Lett. 38, 106 (1981), DOI:10.1063/1.92259
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32593
Deposited By: Aucoeur Ngo
Deposited On:19 Jul 2012 23:15
Last Modified:26 Dec 2012 15:38

Repository Staff Only: item control page