Wilt, D. and Bar-Chaim, N. and Margalit, S. and Ury, I. and Yust, M. and Yariv, A. (1980) Low threshold Be implanted (GaAl)As laser on semi-insulating substrate. IEEE Journal of Quantum Electronics, 16 (4). pp. 390-391. ISSN 0018-9197. doi:10.1109/JQE.1980.1070500. https://resolver.caltech.edu/CaltechAUTHORS:20120724-080910932
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Abstract
Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1980 IEEE. Manuscript received December 13, 1979. This work was supported in part by the Office of Naval Research and the National Science Foundation. | |||||||||
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| Issue or Number: | 4 | |||||||||
| DOI: | 10.1109/JQE.1980.1070500 | |||||||||
| Record Number: | CaltechAUTHORS:20120724-080910932 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20120724-080910932 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 32658 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Tony Diaz | |||||||||
| Deposited On: | 25 Jul 2012 20:43 | |||||||||
| Last Modified: | 09 Nov 2021 21:29 |
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