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Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

Wilt, D. and Bar-Chaim, N. and Margalit, S. and Ury, I. and Yust, M. and Yariv, A. (1980) Low threshold Be implanted (GaAl)As laser on semi-insulating substrate. IEEE Journal of Quantum Electronics, 16 (4). pp. 390-391. ISSN 0018-9197. doi:10.1109/JQE.1980.1070500.

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Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.

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Additional Information:© 1980 IEEE. Manuscript received December 13, 1979. This work was supported in part by the Office of Naval Research and the National Science Foundation.
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Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:4
Record Number:CaltechAUTHORS:20120724-080910932
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:32658
Deposited By: Tony Diaz
Deposited On:25 Jul 2012 20:43
Last Modified:09 Nov 2021 21:29

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