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Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

Tang, H. X. and Kawakami, R. K. and Awschalom, D. D. and Roukes, M. L. (2003) Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices. Physical Review Letters, 90 (10). Art. No. 107201. ISSN 0031-9007. doi:10.1103/PhysRevLett.90.107201.

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Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

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Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2003 The American Physical Society (Received 5 April 2002; published 12 March 2003) We gratefully acknowledge support from DARPA under Grants No. DSO/SPINS-MDA 972-01-1-0024 (Caltech) and No. DARPA/ONR N00014-99-1-1096 (UCSB), and from the AFOSR under Grant No. F49620-02-10036 (UCSB). We also thank Professor P. E.Wigen for valuable discussions.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)MDA 972-01-1-0024
Office of Naval Research (ONR)N00014-99-1-1096
Air Force Office of Scientific Research (AFOSR)F49620-02-10036
Subject Keywords:epitaxial layers; gallium arsenide; manganese compounds; magnetic semiconductors; Hall effect; ferromagnetic materials; magnetic anisotropy; giant magnetoresistance
Issue or Number:10
Record Number:CaltechAUTHORS:TANprl03
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:3271
Deposited By: Archive Administrator
Deposited On:25 May 2006
Last Modified:08 Nov 2021 19:54

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