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Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems

Tang, H. X. and Huang, X. M. H. and Roukes, M. L. and Bichler, M. and Wegscheider, W. (2002) Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems. Applied Physics Letters, 81 (20). pp. 3879-3881. ISSN 0003-6951. doi:10.1063/1.1516237.

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We have fabricated doubly clamped beams from GaAs/AlGaAs quantum-well heterostructures containing a high-mobility two-dimensional electron gas (2DEG). Applying an rf drive to in-plane side gates excites the beam's mechanical resonance through a dipole–dipole mechanism. Sensitive high-frequency displacement transduction is achieved by measuring the ac emf developed across the 2DEG in the presence of a constant dc sense current. The high mobility of the incorporated 2DEG provides low-noise, low-power, and high-gain electromechanical displacement sensing through combined piezoelectric and piezoresistive mechanisms.

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Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2002 American Institute of Physics. (Received 7 March 2002; accepted 30 August 2002) We gratefully acknowledge support from DARPA, through Grant No. DABT63-98-1-0012, and the NSF via grant ECS-0089061. We also thank F. G. Monzon and J. Casey for early contributions to this work, and J. Y. T. Yang and K. Cooper for help with the low temperature amplifier.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)DABT63-98-1-0012
Subject Keywords:gallium arsenide; III-V semiconductors; micromechanical devices; aluminium compounds; two-dimensional electron gas; nanostructured materials; carrier mobility
Issue or Number:20
Record Number:CaltechAUTHORS:TANapl02
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ID Code:3272
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Deposited On:25 May 2006
Last Modified:08 Nov 2021 19:54

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